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KINGSTON DDR3 4GB, 1600 SODIM- LAPTOP MEMORY MODEL LW – KVR16LS11/4

SKU: KVR16LS11/4
KINGSTON
Availability:

Out of stock

AED99.00

Out of stock

KVR16LS11/4, 4GB 1Rx8 512M x 64-Bit PC3L-12800, CL11 204-Pin SODIMM

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Adding more RAM is an effective and quick way to improve your system performance, as more RAM often means more responsive multitasking and faster program switching. A blend of quality and performance, the Kingston memory module is a great upgrade choice for your home and office computers. It is designed, manufactured, and rigorously tested to meet the exact specifications of all brand-name systems, and guaranteed to be compatible, stable, and reliable in challenging situations. Add this memory module and watch your performance skyrocket!

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DDR3 1600This Kingston KVR16LS11/4 memory module is rated at 1600MHz, and delivers up to 12.8GBps bandwidth per channel. You’ll find it ideal for the evolving needs of today’s operating systems and applications. Cas latency 11 ensures smooth system response.

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FIRST-CLASS QUALITYSuperior components, quality construction, and rigorous testing guarantee reliability and stability for use in challenging environments.

This document describes ValueRAM’s 512M x 64-bit (4GB) DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 1Rx8, low voltage, memory module, based on eight 512M x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This 204-pin SODIMM uses gold contact fingers

FEATURES

● JEDEC standard 1.35V (1.28V ~ 1.45V) and
1.5V (1.425V ~1.575V) Power Supply
● VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
● 800MHz fCK for 1600Mb/sec/pin
● 8 independent internal bank
● Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5
● Programmable Additive Latency: 0, CL – 2, or CL – 1 clock
● 8-bit pre-fetch
● Burst Length: 8 (Interleave without any limit, sequential with starting
address “000” only), 4 with tCCD = 4 which does not allow seamless
read or write [either on the fly using A12 or MRS]
● Bi-directional Differential Data Strobe
● Internal(self) calibration : Internal self calibration through ZQ pin
(RZQ : 240 ohm ± 1%)
● On Die Termination using ODT pin
● Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at
85°C < TCASE ≤ 95°C
● Asynchronous Reset
● PCB: Height1.18” (30mm), double sided component
● Lead Free RoHS Compliant

BRANDS

DEVICE

Laptop

MEMORY TYPE

DDR3

RAM CAPACITY

Specification

CL(IDD) 11 cycles
Row Cycle Time (tRCmin) 48.125ns (min.)
Refresh to Active/Refresh
Command Time (tRFCmin)
260ns (min.)
Row Active Time (tRASmin) 35ns (min.)
Maximum Operating Power (1.35V) = 2.376 W*
UL Rating 94 V – 0
Operating Temperature 0o
C to 85o
C
Storage Temperature -55o C to +100oC

           

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