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Kingston Technology 1600MHz DDR3L (PC3-12800) 1.35V Non-ECC CL11 SODIMM Intel Laptop Memory | KVR16LS11/8

SKU: KVR16LS11/8
KINGSTON
Availability:

In stock

AED215.00 AED260.00

In stock

KVR16LS11/8, 8GB 2Rx8 1G x 64-Bit PC3L-12800, L11 204-Pin SODIMM

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Kingston KVR16LS11/8 DDR3 Memory

general informationThe Kingston KVR16LS11/8 DDR3 memory module is a great choice for laptop users craving excellent performance, quality and reliability. It delivers fast speed, low latency to address your daily needs in work and entertainment. It’s carefully constructed and has endured rigorous tests for unbeatable stability and reliability.

 

 

general informationHigh Performance

The Kingston KVR16LS11/8 memory module is rated at 1600MHz to deliver up to 12.8GB/s bandwidth. You’ll find it ideal for the evolving needs of today’s operating systems and applications.

Quality Construction

Kingston memory is designed, manufactured and rigorously tested to meet the exact specifications of each brand name system. It’s guaranteed to be compatible and backed by legendary Kingston reliability.

This document describes ValueRAM’s 1G x 64-bit (8GB)DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 2Rx8, low voltage, memory module, based on sixteen 512M x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This 204-pin SODIMM uses gold contact fingers.

FEATURES

• JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~
1.575V) Power Supply
• VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL – 2, or CL – 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB: Height 1.18” (30mm), double sided component

MEMORY TYPE

DDR3

BRANDS

RAM CAPACITY

DEVICE

Laptop

Specification

CL(IDD) 11 cycles
Row Cycle Time (tRCmin) 48.125ns (min.)
Refresh to Active/Refresh
Command Time (tRFCmin)
260ns (min.)
Row Active Time (tRASmin) 35ns (min.)
Maximum Operating Power (1.35V) = 2.721W*
UL Rating 94 V – 0
Operating Temperature 0oC to 85oC
Storage Temperature -55o C to +100oC

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